NDP References for 1983 - 1984

1984 Literature

D. Fink, J. P. Biersack, M. Städele. K. Tjan, R. A. Haring, and A. E. De Vries "Experiments on the sputtering of group VI elements," Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 1, Issues 2-3, February 1984, Pages 275-281

Geissel, H., Lennard, W. N., Alexander, T. K., Ball, G. C., Forster, J. S., Lone, M. A., Milani, L., and Phillips, D. (1984). Influence of 1.3 MeV He-4 Post-Bombardment of the Depth Profiles of 35 keV He-3 Ions Implanted in Nb, and Au. Nuclear Instruments and Methods B2, 770-773

Usmanova, M. M., Zverev, B. P., Simakhin, Y. F., Idrisov, K., and Zhumaev, N. (1984). Analysis of Distribution of Impurities by Using Neutron Beams. Yad. Fiz. Metody Kor. Pol. Mat. Met. 5-13

Wilson, S.R., Paulson, W.M., Gregory, R.B., Krause, S.J., Gressett, J.D., McDaniel, F.D., and Downing, R.G., “Properties of Ion Implanted Polysilicon Layers Subjected to Rapid Thermal Annealing,” Journal of the Electrochemical Society; Solid State Science and Technology 132(4) (1984) 922-929

Ehrstein, J.R., Downing, R.G., Stallard, B.R., Simons, D.S., and Fleming, R.F., “Comparison Depth Profiling of B-10 in Silicon by Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling,” Semiconductor Processing, ASTM STP 850, Dinesh C. Gupta, ED., American Society for Testing and Materials, (1984) 409-425

Riley, J.E., Jr., Mitchell, J.W., Downing, R.G., Fleming, R. F., Lindstrom, R.M., and Vincent, D.H., “Materials Analysis Using Thermal Neutron Reactions: Applications,” Materials Science Forum 2 (1984) 123-132

Hofsass, H.C., Biegel, J., Ronning, C., Downing, R. G., Lamaze, G.P., "Characterization of Doped Diamondlike Carbon Films and Multilayers, "Materials Research Society Symposium Proceedings, Vol. 316, Eds. Robert J. Culbertson, O.W. Holland, Kevin S. Jones, Karen Maex, pp.881- 886 (1984)

DOI: http://dx.doi.org/10.1557/PROC-316-881

Downing, R. G., Fleming, R. F., Maki, J. T., Simons, D. S., Stallard, B. R. "Near-Surface, and Interfacial Profiling by Neutron Depth Profiling (NDP), and Secondary Ion Mass Spectrometry) (SIMS)." In Thim Films, and Interfaces II, J. E. E. Baglin, D. R. Campbell, and W.K. Chu eds., New York, North-Holland, Vol. (25) pp. 655-656. (1984)

DOI: http://dx.doi.org/10.1557/PROC-25-655

Rybka, V., Hnatowicz, V., Kvítek, J., Vacík, J. and Schmidt, B. (1984), "Determination of the range profiles of boron implanted into Si and SiO2" phys. stat. sol. (a), 83: 165-171.


1983 Literature

Nitrogen depth profiling using the 14N(n,p)4C reaction, Nuclear Instruments and Methods in Physics Research, Volume 218, Issues 1-3, 15 December 1983, Pages 171-175, D. Fink, J. P. Biersack, M. Städele, K. Tjan, and V. K. Cheng

Z2 stopping power oscillations as derived from range measurements, D. Fink, J. P. Biersack, M. Städele, K. Tjan, and V. K. Cheng, Nuclear Instruments and Methods in Physics Research, Volume 218, Issues 1-3, 15 December 1983, Pages 817-820

Distributions of light ions and foil destruction after irradiation of organic polymers, D. Fink, J. P. Biersack, and H. Liebl, in Ion Implantation: Equipment and Techniques, H. Ryssel and H. Glawischnig, eds., Springer-Verlag, Berlin (1983) pp. 318-326

Fink, D., Biersack, J. P., Carstanjen, H. D., Jahnel, F., Muller, K., Ryssel, H., and Osei, A. (1983). Studies on the Lattice Position of Boron in Silicon. Radiation Effects 77, 11-33

Fink, D. (1983). Li, B, and N in Ancient Materials. Nuclear Instruments and Methods, 218, 456-462

Fink, D., Biersack, J. P., and Liebl, H. (1983). Background in (n,p), and (n,a) Spectrometry. In Ion Implantation: Equipment, and Techniques, H. Ryssel, and H. Glawischnig, eds., Berlin, Springer-Verlag, pp. 318-326

Biersack, J. P. (1983). He Profiles in Various Metals after Implantation and Thermal Anneals. Radiation Effects 78, 363

Thwaites, D. T. (1983). Bragg's Rule of Stopping Power Additivity: A Compilation, and Summary of Results. Radiation Research 95, Pages 495-518

Matsumura, H., Maeda, M., and Furukawa, S. (1983). Study on Impurity Diffusion in Glow-Discharged Amorphous Silicon. Japanese Journal of Applied Physics 22(5), 771-774

Matsumura, H., Sakai, K, Maeda, M., Furukawa, S., and Horiuchi, K. (1983). Measurement of Boron Diffusivity in Hydrogenated Amorphous Silicon by Using Nuclear Reaction B10(n, a)Li7 . Journal of Applied Physics 54(6), 3106-3110

Downing, R.G., Fleming, R.F., Langland, J.K., and Vincent, D.H., “Neutron Depth Profiling at the National Bureau of Standards,” Nuclear Instruments and Methods 218 (1983) 47-51