NDP References for 1978 and Earlier
1978 Literature
The use of neutron induced reactions for light element profiling and lattice localization, J. P. Biersack, D. Fink, R. Henkelmann and K. Müller, Nuclear Instruments and Methods, Volume 149, Issues 1-3, 15 February-1 March 1978, Pages 93-97
1977 Literature
Muller, K, Henkelmann, R., Bierseck, J. P., and Mertens, P. (1977). Determination of Low Dose Concentration Profiles in Solids by Means of (n,p), and (n,α) Reactions. Journal of Radioanalytical Chemistry 38, 9-17.
Nagy, A. Z., Bogincs, J., Gyulai, J., Csoke, A., Nazarov, V., Seres, Z., Szab6, A., and Yazvitsky, Y. (1977). Determination of Boron Range Distribution in Ion-Implanted Silicon by the B10 (n,α)7Li Reaction. Journal of Radioanalytical Chemistry 38, 19-27.
Ryssel, H., Kranz, H., Muller, K., Henkelmann, R. A., and Biersack, J. (1977). Comparison of Range, and Range Straggling of Implanted B-10, and B-11 in Silicon. Applied Physics Letters 30(8), 399-401.
1976 Literature
Kvitek, J., Hnatowicz, V., and Kotas, P. (1976). Determination of Boron Concentration profiles in Silicon from B-10(n, α)Li-7 Reaction Product Spectra. Radiochemical and Radioanalytical Letters 24, 205-213.
Biersack, J. P., Fink, D., Mertens, P., Henkelmann, R. A., and Muller, K. (1976). Helium Profiles in Niobium, and Molybdenum. In Plasma Wall Interactions, Oxford, Pergamon Press, pp. 421-430.
Kotas, P., Obrusnik, J., Kvitck, J., and Hnatowicz, V. (1976). Study of Diffusion of Impurities in Semiconductor Silicon by Activation Analysis, and Nuclear Reaction Methods. Journal of Radioanalytical Chemistry 30, 475-488.
1975 Literature
The determination of low dose boron implanted concentration profiles in silicon by the (n,α) reaction, Nuclear Instruments and Methods, Volume 129, Issue 2, 15 November 1975, Pages 557-559, K. Müller, R. Henkelmann, and H. Boroffka
Biersack, J. P., and Fink, D. (1975). Channeling, Blocking, and Range Measurements Using Thermal Neutron Induced Reactions. In Atomic Collisions in Solids, S. Datz, B. R. Appleton, and C. D. Moak, eds., New York, Plenum Press, pp. 737-747.
Biersack, J. P., and Fink, D. (1975). Implantation of Boron, and Lithium in Semiconductors, and Metals. In Ion Implantation in Semiconductors, S. Namba, ed., New York, NY, Plenum Press, pp. 211-218.
Biersack, J. P., and Fink, D. (1975). Study of He Distributions in Niobium by Means of (n,p) Reactions. In International Conference on Radiation Effects, and Tritium Technology for Fusion Reactors, CONF-750989, Gatlinburg, TN, USERDA, pp. II362-II371
1974 Literature
Damage and range profiles of lithium implanted into niobium, J. P. Biersack and D. Fink, Journal of Nuclear Materials, Volume 53, September 1974, Pages 328-331
1973 Literature
Observation of the blocking effect after 6Li(n, t)4He reactions with thermal neutrons, J. P. Biersack and D. Fink, Nuclear Instruments and Methods, Volume 108, Issue 2, 15 April 1973, Pages 397-399
Crowder, B. L., Ziegler, J. F., and Cole, G. W. (1973) The Influence of the Amorphous Phase on Boron Atom Distributions in Ion Implanted Silicon. In Ion Implantation in Semiconductors, and Other Materials, B. L. Crowder, ed., New York, Plenum Press, pp. 257-266
Crowder, B. L., Ziegler, J. F., Morehead, F. F., and Cole, G. W. (1973) The Application of Ion Implantation to the study of Diffusion of Boron in Silicon. In Ion Implantation in Semiconductors, and Other Materials, B. L. Crowder, eds., New York, Plenum Press, pp. 267-274
Mezey, G., Szokefalvi-Nagy, Z., and Badinka, C. S. (1973) Measurement of the Boron Distribution in B-10 Implanted Silicon by the (n,a) Nuclear Reaction. Thin Solid Films 19, 173-175
1972 Literature
Ziegler, J. F., Cole, G. W., and Baglin, J. E. E. (1972) Techniques for Determining Concentration Profiles of Boron Impurities in Substrates. Journal of Applied Physics 43(9). 3809-3815
Ziegler, J. F., Crowder, B. L., Cole, G. W., Baglin, J. E. E., and Masters, B. J. (1972) Boron Atom Distributions in Ion-Implanted Silicon by the (n,4He) Nuclear Reaction. Applied Physics Letters 21, 16-17