NDP References for 1981 - 1982

1982 Literature

A study of masking properties of SiO₂ and photoresists with boron ion implantation, Jarmila Cervena, Vladimir Hnatowicz, Jiri Hoffman, Jiri Kvitek, Pavel Onheiser and Vladimir Rybka. TESLA Electronics 1, 16-20 (1981) (in Microelectronics Reliability, Volume 22, Issue 4, 1982, Page 911

Ranges of ³He and ⁶Li in various solids, D. Fink, J. P. Biersack, K. Tjan, and V. K. Cheng, Nuclear Instruments and Methods, Volume 194, Issues 1-3, 15 March 1982, Pages 105-111

Jahnel, F., Biersack, J., Crowder, B. L., d'Heurle, F. M., Fink, D., Isaac, R. D., Lucchese, C. J., and Petrersson, C. S. (1982). The Behavior of Boron (Also Arsenic) in Bilayers of Polycrystalline Silicon, and Tungsten Disilicide. Journal of Applied Physics 53(11), 7372-7378

Pelikan, L., Rybka, V., Krejci, P., Hnatowicz, V., and Kvitek, J. (1982). Study of Boron Implantation in Ag-Si Layer Structures. Physica Status Solidi 72, 369-373

Kristiakova, K., Kristiak, J., Kvitek, J., and Cervena, J. (1982). The Surface Boron Concentration of NixFe8O-xB20 Samples. Nuclear Instruments and Methods 199, 371

Vodopyanov, L. K., and Kozyrev, S. P. (1982). Ion Implantation of B⁺ in n-HgO.8 CdO.2 Te. Physica Status Solidi 72, K133-K136

Downing, R.G., Fleming, R.F., Simons, D.S., and Newbury, D.E., “Neutron- Induced Reactions and Secondary Ion Mass Spectrometry: Complementary Tools for Depth Profiling,” In Microbeam Analysis; K.F.J. Heinrich, Ed.; San Francisco Press: San Francisco, (1982) 219-221

1981 Literature

The use of the neutron induced reaction for boron profiling in Si, Nuclear Instruments and Methods, J. ervená, V. Hnatowicz, J. Hoffmann, Z. Kosina, J. Kvítek, and P. Onheiser Volume 188, Issue 1, 1 September 1981, Pages 185-189

Description of arsenic and boron profiles implanted in SiO₂, Si₃N₄ and Si using Pearson distributions with four moments, F. Jahnel, H. Ryssel, G. Prinke, K. Hoffmann, K. Müller, J. Biersack and R. Henkelmann, Nuclear Instruments and Methods, Volumes 182-183, Part 1, 15 April-1 May 1981, Pages 223-229

Ryssel, H., Prinke, G., Haberger, K., Hoffmann, K., Muller, K., and Henkelmann, R. (1981). Range Parameters of Boron Implanted into Silicon. Applied Physics 24, 39-43

Studies of Li, B and N in ancient oriental pottery and modern ceramic materials by means of (n, p) and (n, α) spectrometry, D. Fink, and J. Riederer, Nuclear Instruments and Methods, Volume 191, Issues 1-3, 31 December 1981, Pages 408-413

Fink, D., Biersack, J. P., Jahnel, F., and Henkelmann, R. (1981). Untersuchung von Helium, Lithium, und Bor in Metallen mit Hilfe von (nep), and (n,a)-reaktionen. In Analysis of Nonmetals in Metals, Berlin, Walter de Gruyter and Co., pp. 163-171

An instrument for lattice location studies of light impurity atoms by means of (n, α)-reactions, J. P. Biersack, D. Fink, J. Lauch, R. Henkelmann, and K. Müller, Nuclear Instruments and Methods, Volume 188, Issue 2, 15 September 1981, Pages 411-419

Cervená, J., Hnatowicz, V., Hoffmann, J., Kvitek, J., Onheiser, P., and Rybka, V., A. (1981). A Study of Masking properties of SiO2, and Photoresists with Boron Ion Implantation. Tesla Electronics 14(1), 16-20